The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jan. 18, 2019
Conductive line construction, memory circuitry, and method of forming a conductive line construction
Micron Technology, Inc., Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a conductive line construction comprises forming a structure comprising polysilicon-comprising material. Elemental titanium is directly against the polysilicon of the polysilicon-comprising material. Silicon nitride is directly against the elemental titanium. Elemental tungsten is directly against the silicon nitride. The structure is annealed to form a conductive line construction comprising the polysilicon-comprising material, titanium silicide directly against the polysilicon-comprising material, elemental tungsten, TiSiNbetween the elemental tungsten and the titanium silicide, and one of (a) or (b), with (a) being the TiSiNis directly against the titanium silicide, and (b) being titanium nitride is between the TiSiNand the titanium silicide, with the TiSiNbeing directly against the titanium nitride and the titanium nitride being directly against the titanium silicide. Structure independent of method is disclosed.