The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Dec. 16, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Kuo-Yu Chou, Hsinchu, TW;
Seiji Takahashi, Hsinchu, TW;
Shang-Fu Yeh, Hsin Chu, TW;
Chih-Lin Lee, Miaoli County, TW;
Chin Yin, Tainan, TW;
Calvin Yi-Ping Chao, Zhubei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A semiconductor device comprises a source/drain diffusion area, and a first doped region. The source/drain diffusion area is defined between a first isolation structure and a second isolation structure. The source/drain diffusion area includes a source region, a drain region, and a device channel. The device channel is between the source region and the drain region. The first doped region is disposed along a first junction between the device channel and the first isolation structure in a direction from the source region to the drain region. The first doped region is separated from at least one of the source region and the drain region, and has a dopant concentration higher than that of the device channel. The semiconductor device of the present disclosure has low random telegraph signal noise and fewer defects.