The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Nov. 20, 2018
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takahito Umehara, Iwate, JP;
Masato Koakutsu, Iwate, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/321 (2006.01); H01L 21/225 (2006.01); H01L 21/687 (2006.01); C23C 16/52 (2006.01); H01L 27/11582 (2017.01); C23C 16/40 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); H01L 27/1157 (2017.01);
U.S. Cl.
CPC ...
H01L 21/02299 (2013.01); C23C 16/06 (2013.01); C23C 16/401 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02208 (2013.01); H01L 21/02211 (2013.01); H01L 21/02219 (2013.01); H01L 21/02271 (2013.01); H01L 21/225 (2013.01); H01L 21/321 (2013.01); H01L 21/68764 (2013.01); H01L 21/68771 (2013.01); H01L 27/1157 (2013.01); H01L 27/11582 (2013.01);
Abstract
A method for manufacturing a semiconductor device is provided. In the method, impurities contained in a first layer formed on a substrate are removed by heating the first layer. On the first layer, a second layer is formed containing a component that forms a substance that is able to vaporize by reacting with the impurities.