The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 27, 2021
Filed:
Jan. 22, 2019
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Xiao Liu, Fairfax, VA (US);
Battogtokh Jugdersuren, Alexandria, VA (US);
Brian T. Kearney, Martinez, CA (US);
Abstract
A method for producing high-temperature sputtered stoichiometric TiN thin films. A substrate is placed in a sputtering chamber a Ti target to be sputtered and the substrate temperature is controlled to be between room temperature and about 800° C. The sputtering chamber is evacuated to a base pressure of 2×10Torr or lower, The Ti target is presputtered under an Ar gas flow at a pressure of 2-15 mTorr in a radio frequency (RF) power of 50-200 W. The Ti is then sputtered onto the substrate in the presence of Nand Ar gas flows under the same pressure and RF power, with the ratio of Nto Ar favoring N to ensure that the film is nitrogen-saturated.