The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Apr. 30, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Junhyoung Kim, Seoul, KR;
Kwang-Soo Kim, Hwaseong-si, KR;
Geunwon Lim, Yongin-si, KR;
Jisung Cheon, Ansan-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11565 (2017.01); H01L 27/11582 (2017.01); H01L 27/11573 (2017.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01); H01L 21/31111 (2013.01); H01L 21/31116 (2013.01);
Abstract
A three-dimensional semiconductor memory device may include a first stack block including first stacks arranged in a first direction on a substrate, a second stack block including second stacks arranged in the first direction on the substrate, and a separation structure provided on the substrate between the first stack block and the second stack block. The separation structure may include first mold layers and second mold layers, which are stacked in a vertical direction perpendicular to a top surface of the substrate.