The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Jan. 08, 2020
Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Hiroshi Kudo, Tokyo, JP;

Takamasa Takano, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 23/498 (2006.01); H05K 3/46 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H05K 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/02063 (2013.01); H01L 21/02071 (2013.01); H01L 21/02126 (2013.01); H01L 21/02274 (2013.01); H01L 21/31058 (2013.01); H01L 21/31116 (2013.01); H01L 21/7685 (2013.01); H01L 21/76877 (2013.01); H01L 23/49822 (2013.01); H01L 23/5226 (2013.01); H01L 23/5329 (2013.01); H01L 23/53295 (2013.01); H05K 3/4688 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 21/76885 (2013.01); H01L 2924/0002 (2013.01); H05K 1/0231 (2013.01); H05K 3/4679 (2013.01); H05K 2201/068 (2013.01);
Abstract

A multi-layer line structure including a substrate, a lower layer Cu line located on the substrate, an upper layer Cu line located on an insulating layer including an inorganic film located on the lower layer Cu line and an organic resin film located on the inorganic film, and a via connection part located in a via connection hole running in an up-down direction through the insulating layer in an area where the lower layer Cu line and the upper layer Cu line overlap each other is provided. The via connection part includes a barrier conductive layer located on a part of the lower layer Cu line exposed to a bottom part of the via connection hole and on an inner wall of the via connection hole.


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