The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Jun. 22, 2020
Nexchip Semiconductor Corporation, Anhui, CN;
Sun-Hung Chen, Anhui, CN;
Tsun-Min Cheng, Anhui, CN;
Jui-Min Lee, Anhui, CN;
Wei Xiang, Anhui, CN;
Renwei Zhu, Anhui, CN;
NEXCHIP SEMICONDUCTOR CORPORATION, Hefei, CN;
Abstract
A semiconductor structure and method for forming such a structure are disclosed by the present invention. In the method, before a first trench in a pre-processed substrate is filled with any filling material, an auxiliary layer is formed over an inner surface of the first trench. Afterward, a first filling dielectric is formed and an etch back process is performed so that a top surface of the first filling dielectric is higher than that of the pre-processed substrate, and a second filling dielectric is then formed and subject to a second planarization process.