The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Dec. 05, 2019
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Zhonghua Li, Shanghai, CN;
Shanghai Huali Integrated Circuit Corporation, Shanghai, CN;
Abstract
The invention discloses a method for manufacturing nickel silicide. The method comprises: Step: providing a semiconductor substrate, wherein the semiconductor substrate has an exposed silicon surface which is a formation region of nickel silicide; Step: carrying out pre-amorphization ion implantation to form an amorphous layer in the formation region of the nickel silicide, wherein an implantation source of the pre-amorphization ion implantation is xenon; and Step: forming the nickel silicide in the formation region of the nickel silicide by self-alignment. Xenon which is a non-radioactive inert gas with the maximum mass is adopted to optimize the uniformity of an interface layer between the amorphous layer and silicon, so that the uniformity of the ohm contact resistance of the nickel silicide is improved.