The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 20, 2021

Filed:

Apr. 29, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Jeffrey S. McNeil, Nampa, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/14 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01);
Abstract

Apparatus configured to perform an access operation on a memory cell of an array of memory cells, discharge a control gate of a first field-effect transistor after performing the access operation, discharge a control gate of a second field-effect transistor connected in series between the first field-effect transistor and the memory cell after discharging the control gate of the first field-effect transistor, and discharge a control gate of the memory cell after discharging the control gate of the second field-effect transistor.


Find Patent Forward Citations

McNeil, Jeffrey. (2021). Apparatus for discharging control gates after performing an access operation on a memory cell (U.S. Patent No. 11069408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11069408

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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