The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Mar. 28, 2019
Applicant:
Cambridge Gan Devices Limited, Cambourne, GB;
Inventors:
Assignee:
CAMBRIDGE GAN DEVICES LIMITED, Cambridge, GB;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01F 1/688 (2006.01); G01F 1/698 (2006.01); G01L 9/00 (2006.01); H01L 35/34 (2006.01); H01L 35/30 (2006.01); H01L 35/22 (2006.01); H01L 35/32 (2006.01);
U.S. Cl.
CPC ...
G01F 1/6888 (2013.01); G01F 1/698 (2013.01); G01L 9/008 (2013.01); H01L 35/34 (2013.01); H01L 35/22 (2013.01); H01L 35/30 (2013.01); H01L 35/32 (2013.01);
Abstract
We disclose herewith a heterostructure-based sensor comprising a substrate comprising an etched portion and a substrate portion; a device region located on the etched portion and the substrate portion; the device region comprising at least one membrane region which is an area over the etched portion of the substrate. At least one heterostructure-based element is located at least partially within or on the at least one membrane region, the heterostructure-based element comprising at least one two dimensional (2D) carrier gas.