The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 20, 2021
Filed:
Dec. 14, 2018
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yihong Chen, San Jose, CA (US);
Yong Wu, Sunnyvale, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/18 (2006.01); C23C 16/455 (2006.01); C23C 16/04 (2006.01); C23C 14/00 (2006.01); C23C 16/458 (2006.01); C23C 16/02 (2006.01); H01B 1/06 (2006.01); C07F 15/00 (2006.01);
U.S. Cl.
CPC ...
C23C 16/18 (2013.01); C23C 14/0047 (2013.01); C23C 16/0272 (2013.01); C23C 16/04 (2013.01); C23C 16/4584 (2013.01); C23C 16/45519 (2013.01); C23C 16/45529 (2013.01); C23C 16/45551 (2013.01); C23C 16/45553 (2013.01); C07F 15/0046 (2013.01); C23C 16/45542 (2013.01); H01B 1/06 (2013.01);
Abstract
Methods of selectively depositing ruthenium are described. The preferred deposition surface changes based on the substrate temperature during processing. At high temperatures, ruthenium is deposited on a first surface of a conductive material over a second surface of an insulating material. At lower temperatures, ruthenium is deposited on an insulating surface over a conducting surface.