The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Apr. 12, 2018
Applicants:
Stmicroelectronics International N.v., Schiphol, NL;
Stmicroelectronics SA, Montrouge, FR;
Inventors:
Radhakrishnan Sithanandam, Greater Noida, IN;
Divya Agarwal, Noida, IN;
Ghislain Troussier, Voiron, FR;
Jean Jimenez, Saint Theoffrey, FR;
Malathi Kar, Delhi, IN;
Assignees:
STMicroelectronics International N.V., Schiphol, NL;
STMicroelectronics SA, Montrouge, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0255 (2013.01); H01L 27/0266 (2013.01); H01L 27/0288 (2013.01);
Abstract
Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated MOSFET device. Triggering of the MOSFET device is made at both the gate terminal and the substrate (back gate) terminal. Additionally, the MOSFET device can be formed of cascoded MOSFETs.