The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Mar. 22, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/32 (2006.01); H01L 29/872 (2006.01); H01L 29/861 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/0619 (2013.01); H01L 29/1608 (2013.01); H01L 29/32 (2013.01); H01L 29/41741 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01); H01L 29/045 (2013.01);
Abstract
A semiconductor component includes a SiC semiconductor body. A drift zone of a first conductivity type and a semiconductor region are formed in the SiC semiconductor body. Barrier structures extending from the semiconductor region into the drift zone differ from the gate structures.