The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Jan. 31, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventor:
Tung-Jiun Wu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 21/76832 (2013.01); H01L 23/3171 (2013.01); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 23/53214 (2013.01); H01L 23/53228 (2013.01); H01L 23/53295 (2013.01);
Abstract
The present disclosure provides a semiconductor structure, including a bottom terminal, a middle terminal over the bottom terminal and separated from the bottom terminal by a high-k dielectric layer, a top terminal over the middle terminal and separated from the middle terminal by the high-k dielectric layer, and a silicon nitride layer over the top terminal and directly on the high-k dielectric layer.