The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Aug. 09, 2019
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Fei Zhou, Shanghai, CN;
Abstract
A semiconductor device and a fabrication method are provided. The method includes forming a first fin structure and a second fin structure on a substrate. The first fin structure includes a first sidewall surface, facing to the second fin structure, and a second sidewall surface opposite to the first sidewall surface. The method also includes forming an isolation layer to cover a portion of sidewall surfaces of the first fin structure and the second fin structure. The top surface of the isolation layer is lower than the top surfaces of the first fin structure and the second fin structure. The method further includes forming a first sidewall on the first sidewall surface; forming a first doped layer in the first fin structure; and forming a second doped layer in the second fin structure. The first sidewall covers a portion of a sidewall surface of the first doped layer.