The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

May. 23, 2019
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Ping Hsu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); H01L 27/10814 (2013.01);
Abstract

A semiconductor memory device includes a substrate with a drain and a source; a gate structure, disposed on the substrate between the drain and the source; a first dielectric, disposed on the substrate, covering the gate structure; a second dielectric disposed on the first dielectric; a plug having a first part in the first dielectric and a second part in the second dielectric, wherein the first part is in contact with the source of the substrate; a storage node landing pad, covering the second part of the plug and covered by the second dielectric; a bit line disposed on the second dielectric and connected to the drain of the substrate; a third dielectric disposed on the bit line; and a storage node, disposed on the third dielectric, contacting the storage node landing pad through the second dielectric and the third dielectric.


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