The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
May. 15, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Michael Roesner, Villach, AT;
Gudrun Stranzl, Goedersdorf, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 24/30 (2013.01); H01L 24/27 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/83 (2013.01); H01L 29/456 (2013.01); H01L 2224/29111 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/29166 (2013.01); H01L 2224/29193 (2013.01); H01L 2224/30505 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33505 (2013.01); H01L 2224/83801 (2013.01); H01L 2924/048 (2013.01); H01L 2924/0474 (2013.01); H01L 2924/0475 (2013.01); H01L 2924/0476 (2013.01); H01L 2924/0479 (2013.01);
Abstract
A semiconductor device includes a silicon layer, a metal silicide layer arranged directly on the silicon layer, and a solder layer arranged directly on the metal silicide layer.