The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Sep. 13, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yong Koon Lee, Suwon-si, KR;

Myung Sam Kang, Suwon-si, KR;

Young Gwan Ko, Suwon-si, KR;

Young Chan Ko, Suwon-si, KR;

Chang Bae Lee, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/16 (2006.01); H01L 23/66 (2006.01); H01L 23/552 (2006.01); H01Q 1/38 (2006.01); H01L 23/13 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5389 (2013.01); H01L 21/486 (2013.01); H01L 21/4853 (2013.01); H01L 21/4857 (2013.01); H01L 23/13 (2013.01); H01L 23/3128 (2013.01); H01L 23/3135 (2013.01); H01L 23/5386 (2013.01); H01L 23/552 (2013.01); H01L 23/66 (2013.01); H01L 24/05 (2013.01); H01L 24/19 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 25/16 (2013.01); H01Q 1/38 (2013.01); H01L 2223/6616 (2013.01); H01L 2223/6677 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24195 (2013.01); H01L 2224/82101 (2013.01); H01L 2924/1421 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/3025 (2013.01);
Abstract

A semiconductor package includes a core structure having a first through-hole and including a frame having an opening, a passive component disposed in the opening, a first encapsulant covering the frame and the passive component, a first metal layer disposed on an inner surface of the first through-hole, and a second metal layer disposed on an inner surface of the opening; a first semiconductor chip disposed in the first through-hole and having a first connection pad; a second encapsulant covering the core structure and the first semiconductor chip; a connection structure disposed on the core structure and the first semiconductor chip and including a redistribution layer; and a metal pattern layer disposed on the second encapsulant. The first and second metal layers are connected to the metal pattern layer through first and second metal vias having heights different from each other.


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