The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Aug. 07, 2020
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Antti Juhani Niskanen, Helsinki, FI;
Jaakko Anttila, Helsinki, FI;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32135 (2013.01); H01L 21/02074 (2013.01); H01L 21/02225 (2013.01); H01L 21/02334 (2013.01); H01L 21/02337 (2013.01); H01L 21/30621 (2013.01); H01L 21/31111 (2013.01); H01L 21/32136 (2013.01); H01L 21/76883 (2013.01); H01L 21/76849 (2013.01);
Abstract
Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.