The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
Apr. 01, 2020
Macronix International Co., Ltd., Hsinchu, TW;
Shaw-Hung Ku, Hsinchu, TW;
Cheng-Hsien Cheng, Yunlin County, TW;
Atsuhiro Suzuki, Hsinchu, TW;
Yu-Hung Huang, Tainan, TW;
Sheng-Kai Chen, New Taipei, TW;
Wen-Jer Tsai, Hualien, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A memory device and a programming method thereof are provided. The memory device includes a memory array, a plurality of word lines and a voltage generator. During a programming procedure, one of the word lines is at a selected state and others of the word lines are at a deselected state. Some of the word lines, which are at the deselected state, are classified into a first group and a second group. The first group and the second group are respectively located at two sides of the word line, which is at the selected state. The voltage generator provides a programming voltage to the word line, which is at the select state, during a programming duration. The voltage generator provides a first two-stage voltage waveform to the word lines in the first group and provides a second two-stage voltage waveform to the word lines in the second group.