The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 13, 2021

Filed:

Sep. 18, 2019
Applicant:

SK Hynix Inc., San Jose, CA (US);

Inventors:

Naveen Kumar, San Jose, CA (US);

Yu Cai, San Jose, CA (US);

Fan Zhang, San Jose, CA (US);

Assignee:

SK hynix Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/409 (2006.01); G11C 29/12 (2006.01); H03M 13/25 (2006.01); H03M 13/45 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4085 (2013.01); G11C 11/409 (2013.01); G11C 29/12 (2013.01); H03M 13/255 (2013.01); H03M 13/45 (2013.01); G11C 2029/1202 (2013.01);
Abstract

Systems, memory controllers, decoders and methods perform decoding by exploiting differences among word lines for which soft decoding fails (failed word lines). Such decoding generates extrinsic information for codewords of failed word lines based on the soft decoding. The soft information obtained during the soft decoding is updated based on the extrinsic information, and the updated soft information is propagated across failed word lines. Low-density parity-check (LDDC) decoding of codewords of failed word lines is performed with the updated soft information.


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Kumar, Naveen. (2021). Memory system to process multiple word line failures with limited storage and method of operating such memory system (U.S. Patent No. 11062758). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11062758

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