The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 13, 2021
Filed:
May. 13, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
Some embodiments relate to a sense amplifier. The sense amplifier includes a fully-depleted silicon on insulator (FDSOI) substrate, including a handle substrate region, an insulator layer over the handle substrate region, and a device region over the insulator layer. An n-well region is disposed in the handle substrate region, and an n-well contact region extends from the n-well region through the insulator layer to an upper surface of the device region. A pair of pull-down transistors are disposed in the device region and over the n-well. The pair of pull-down transistors have their respective gates coupled to a pair of complementary bitlines, respectively, and coupled to the n-well through the n-well contact region.