The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11060189 B1

PDF
Full Text
Expired
Date of Patent:
Jul. 13, 2021

Filed:

Dec. 18, 2017
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Michael Wenyoung Tsiang, Fremont, CA (US);

Praket P. Jha, San Jose, CA (US);

Deenesh Padhi, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/44 (2006.01); C23C 16/24 (2006.01); C23C 16/40 (2006.01); C23C 16/505 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C23C 16/4405 (2013.01); C23C 16/24 (2013.01); C23C 16/402 (2013.01); C23C 16/505 (2013.01); H01J 37/32082 (2013.01); H01J 37/32862 (2013.01); H01L 21/0214 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02216 (2013.01); H01L 21/02274 (2013.01); H01J 2237/332 (2013.01);
Abstract

Implementations of the present disclosure provide methods for processing substrates in a processing chamber. In one implementation, the method includes (a) depositing a dielectric layer on a first substrate at a first chamber pressure using a first high-frequency RF power, (b) depositing sequentially a dielectric layer on N substrates subsequent to the first substrate at a second chamber pressure, wherein N is an integral number of 5 to 10, and wherein depositing each substrate of N substrates comprises using a second high-frequency RF power that has a power density of about 0.21 W/cmto about 0.35 W/cmlower than that of the first high-frequency RF power, (c) performing a chamber cleaning process without the presence of a substrate, and (d) repeating (a) to (c).


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