The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Jun. 18, 2019
Micron Technology, Inc., Boise, ID (US);
Ankit Sharma, Boise, ID (US);
Akira Goda, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A memory cell comprises, in the following order, channel material, a charge-passage structure, programmable material, a charge-blocking region, and a control gate. The charge-passage structure comprises a first material closest to the channel material, a third material furthest from the channel material, and a second material between the first material and the third material. The first and third materials comprise SiO. The second material has a thickness of 0.4 nanometer to 5.0 nanometers and comprises SiO, where 'x' is less than 2.0 and greater than 0. Other embodiments are disclosed.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile