The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Dec. 06, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;
Chang-Ming Wu, New Taipei, TW;
Wei Cheng Wu, Zhubei, TW;
Shih-Chang Liu, Alian Township, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of forming a memory cell. The method may be performed by forming a sacrificial spacer over a substrate and forming a select gate along a side of the sacrificial spacer. An inter-gate dielectric is formed over the select gate and the sacrificial spacer. A memory gate layer is formed over the inter-gate dielectric and the sacrificial spacer. The memory gate layer is laterally separated from the sacrificial spacer by the select gate. The memory gate layer is etched to define a memory gate having a topmost point below a top of the sacrificial spacer.