The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Jun. 12, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Hsiang-Ku Shen, Hsinchu, TW;
Ming-Hong Kao, Hsinchu, TW;
Hui-Chi Chen, Hsinchu County, TW;
Dian-Hau Chen, Hsinchu, TW;
Yen-Ming Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
A method of fabricating a metal-insulator-metal (MIM) capacitor structure includes forming a bottom electrode, forming a first oxide layer adjacent the bottom electrode, and depositing a first high-k dielectric layer over the bottom electrode and the first oxide layer. A middle electrode is then formed over the first high-k dielectric layer and a second oxide layer is formed adjacent the middle electrode. A second high-k dielectric layer may be deposited over the middle electrode and the second oxide layer and a top electrode over the second high-k dielectric layer.