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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11056505 B1

PDFFull Text
Date of Patent:
Jul. 06, 2021

Filed:

Dec. 10, 2019

Integrated assemblies having one or more modifying substances distributed within semiconductor material, and methods of forming integrated assemblies

Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

John D. Hopkins, Meridian, ID (US);

Purnima Narayanan, Boise, ID (US);

Jordan D. Greenlee, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:

Wells St. John P.S.

Primary Examiner:

George R Fourson, III

Int. Cl.
CPC ...
H01L 27/115 (2017.01); H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/1157 (2017.01); H01L 23/522 (2006.01); H01L 21/768 (2006.01); H01L 21/3215 (2006.01); H01L 21/311 (2006.01); H01L 27/11578 (2017.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/31111 (2013.01); H01L 21/3215 (2013.01); H01L 21/76802 (2013.01); H01L 21/76856 (2013.01); H01L 21/76859 (2013.01); H01L 21/76877 (2013.01); H01L 23/5226 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 21/76814 (2013.01); H01L 21/76858 (2013.01); H01L 21/76883 (2013.01); H01L 27/0688 (2013.01); H01L 27/11578 (2013.01);
Abstract

Some embodiments include a method of forming an integrated assembly. A stack of alternating first and second materials is formed over a conductive structure. The conductive structure includes a semiconductor-containing material over a metal-containing material. An opening is formed to extend through the stack and through the semiconductor-containing material, to expose the metal-containing material. The semiconductor-containing material is doped with carbon and/or with one or more metals. After the doping of the semiconductor-containing material, the second material of the stack is removed to form voids. Conductive material is formed within the voids. Insulative material is formed within the opening. Some embodiments include integrated assemblies having carbon distributed within at least a portion of a semiconductor material.

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