The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Apr. 16, 2019
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Jinshuang Zhang, Shanghai, CN;
Haoyu Chen, Shanghai, CN;
Qiwei Wang, Shanghai, CN;
Feng Ji, Shanghai, CN;
SHANGHAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Abstract
The present disclosure provides a semiconductor device and a manufacturing method therefor. The manufacturing method for a semiconductor device is provided for forming through-holes in a semiconductor device, comprising: forming a plurality of shallow trench isolations in portions of a substrate corresponding to memory cell regions; forming a plurality of gates on surfaces of the portions of the substrate; forming spacers on side walls at both sides of the gates extending in the first direction; depositing a sacrificial layer on the memory cell region; removing portions of the sacrificial layer corresponding to the shallow trench isolations at memory cell drain, and depositing an isolation dielectric on the shallow trench isolations at the memory cell drain to form isolation strips; and removing the remaining sacrificial layer to form bottom through-holes in spaces formed after removing the remaining sacrificial layer.