The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Aug. 01, 2019
Abb Power Grids Switzerland Ag, Baden, CH;
Chunlei Liu, Oberrohrdorf, CH;
Franc Dugal, Benglen, CH;
Munaf Rahimo, Gänsbrunnen, CH;
Peter Karl Steimer, Ehrendingen, CH;
ABB Power Grids Switzerland AG, Baden, CH;
Abstract
A power semiconductor device includes a Si chip providing a Si switch and a wide bandgap material chip providing a wide bandgap material switch, wherein the Si switch and the wide bandgap material switch are electrically connected in parallel. A method for controlling a power semiconductor device includes: during a normal operation mode, controlling at least the wide bandgap material switch for switching a current through the power semiconductor device by applying corresponding gate signals to at least the wide bandgap material switch; sensing a failure in the power semiconductor device; and, in the case of a sensed failure, controlling the Si switch by applying a gate signal, such that a current is generated in the Si chip heating the Si chip to a temperature forming a permanent conducting path through the Si chip.