The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Dec. 19, 2017
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventor:
Atsuki Fukazawa, Tama, JP;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/455 (2006.01); C23C 16/34 (2006.01); C23C 16/517 (2006.01); C23C 16/06 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/45527 (2013.01); C23C 16/45536 (2013.01); C23C 16/45538 (2013.01); C23C 16/517 (2013.01); C23C 16/06 (2013.01); C23C 16/34 (2013.01);
Abstract
Examples of a method for manufacturing a semiconductor device include forming an initial film having a film thickness of 1 to 3 nm made of a metal or a metal nitride by applying plasma film formation with plasma power of 0.07 to 0.30 W/cmand an RF pulse width within a range of 0.1 to 1 sec, and forming, after forming the initial film, a bulk film made of a metal or metal nitride on the initial film by applying plasma film formation with plasma power higher than the plasma power when the initial film is formed.