The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 06, 2021
Filed:
Dec. 27, 2017
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Jason Brand, Placerville, CA (US);
Jason Snodgress, Livermore, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 7/04 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 7/04 (2013.01); G11C 13/004 (2013.01); G11C 13/0033 (2013.01); G11C 29/50 (2013.01); G11C 13/00 (2013.01); G11C 2029/5002 (2013.01);
Abstract
A phase change memory array may include at least one cell used to determine whether the array has been altered by thermal exposure over time. The cell may be the same or different from the other cells. In some embodiments, the cell is only read in response to an event. If, in response to that reading, it is determined that the cell has changed state or resistance, it may deduce whether the change is a result of thermal exposure. Corrective measures may then be taken.