The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 06, 2021

Filed:

Jun. 20, 2019
Applicant:

Adesto Technologies Corporation, Santa Clara, CA (US);

Inventors:

Stephen Trinh, San Jose, CA (US);

Duong Vinh Hao, Ho Chi Minh, VN;

Nguyen Khac Hieu, Ho Chi Minh, VN;

Hendrik Hartono, San Jose, CA (US);

John Dinh, Dublin, CA (US);

Shane Charles Hollmer, Grass Valley, CA (US);

Assignee:

Adesto Technologies Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 5/14 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 5/145 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract

A memory device can include a plurality of banks, each bank including a memory cell array of nonvolatile (NV) memory cells; a plurality of charge pumps, including a first charge pump and second charge pump; and a switch circuit. The switch circuit can be configured to, in a first mode, connect the first charge pump to first circuits of the banks and isolate the second charge pump from the first circuits, and in a second mode, isolate the first charge pump from the first circuits and connect the second charge pump to the first circuits.


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