The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Sep. 27, 2018
Fuji Electric Co., Ltd., Kanagawa, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device is provided comprising: a semiconductor substrate; a drift region having a first conductivity type formed in the semiconductor substrate; a collector region having a second conductivity type, in the semiconductor substrate, formed between the lower surface of the semiconductor substrate and the drift region; and a high concentration region having a first conductivity type, in the semiconductor substrate, formed between the drift region and the collector region and having higher doping concentration than that in the drift region, wherein a doping concentration distribution of the high concentration region in the depth direction of the semiconductor substrate comprises one or more peaks, wherein a distance between a first peak closest to the lower surface side of the semiconductor substrate among the peaks of the doping concentration distribution of the high concentration region and the lower surface of the semiconductor substrate is 3 μm or less.