The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Oct. 29, 2019
Micron Technology, Inc., Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A method of forming a microelectronic device comprises forming a stack structure comprising insulative structures and additional insulative structures vertically alternating with the insulative structures. Apertures are formed to extend to surfaces of the insulative structures at different depths than one another within the stack structure. Dielectric liner structures are formed within the apertures. Sacrificial structures are formed within portions of the apertures remaining unoccupied by the dielectric liner structures. Upper portions of the sacrificial structures are replaced with capping structures. Portions of the insulative structures and remaining portions of the sacrificial structures are replaced with electrically conductive material. Microelectronic devices and electronic systems are also described.