The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Jul. 10, 2018
Samsung Electronics Co., Ltd., Suwon-si, KR;
Seul Ha Myung, Incheon, KR;
Min Joon Park, Seongnam-si, KR;
Hyo Sung Kim, Suwon-si, KR;
Kyung Hoon Lee, Seoul, KR;
Jae Hyun Lee, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.