The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Oct. 09, 2019
Applicant:

Kla Corporation, Milpitas, CA (US);

Inventors:

Dieter Mueller, San Jose, CA (US);

Prasanna Dighe, San Ramon, CA (US);

Xiaomeng Shen, San Jose, CA (US);

Jason Saito, San Jose, CA (US);

Assignee:

KLA Corporation, Milpitas, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/027 (2006.01); B82Y 20/00 (2011.01); G03F 7/09 (2006.01); H01L 21/66 (2006.01); G01B 11/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); B82Y 20/00 (2013.01); G01B 11/2441 (2013.01); G03F 7/091 (2013.01); H01L 22/12 (2013.01);
Abstract

A method of using removable opaque coating for accurate optical topography measurements on top surfaces of transparent films includes: depositing a highly reflective coating onto a top surface of a wafer, measuring topography on the highly reflective coating, and removing the highly reflective coating from the wafer. The highly reflective coating includes an organic material. The highly reflective coating comprises a refractive index value between one and two. The highly reflective coating comprises a complex wavelength greater than one at six-hundred and thirty-five nanometers. The highly reflective coating reflects at least twenty percent of incident light. The highly reflective coating when deposited maintains an underlayer pattern topography at a resolution of forty by forty micrometers. The highly reflective coating does not cause destructive stress to the wafer.


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