The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 29, 2021
Filed:
Feb. 27, 2020
Ememory Technology Inc., Hsin-Chu, TW;
Wein-Town Sun, Hsinchu County, TW;
Hsueh-Wei Chen, Hsinchu County, TW;
Chun-Hsiao Li, Hsinchu County, TW;
Wei-Ren Chen, Hsinchu County, TW;
Hong-Yi Liao, Hsinchu County, TW;
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Abstract
An erasable programmable non-volatile memory includes a memory array and a sensing circuit. The memory array includes a general memory cell and a reference memory cell, which are connected with a word line. The sensing circuit includes a current comparator. The read current in the program state of the general memory cell is higher than the read current in the program state of the reference memory cell. The erase efficiency of the general memory cell is higher than the erase efficiency of the reference memory cell. When a read action is performed, the general memory cell generates a read current to the current comparator, and the reference memory cell generates a reference current to the current comparator. According to the reference current and the read current, the current comparator generates an output data signal to indicate a storage state of the general memory cell.