The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Jun. 16, 2020
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventors:

Fabio Enrico Carlo Disegni, Spino d'adda, IT;

Federico Goller, Turin, IT;

Cesare Torti, Pavia, IT;

Marcella Carissimi, Treviolo, IT;

Emanuela Calvetti, Villa d'adda, IT;

Assignee:

STMICROELECTRONICS S.R.L., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0097 (2013.01); G11C 2013/0078 (2013.01);
Abstract

A method for programming a phase-change-memory device of a differential type comprises, in a first programming mode, supplying, during a first time interval, a same first programming current, of a type chosen between a SET current and a RESET current, to all the direct and complementary memory cells that are to be programmed with said first programming current; and, in a second programming mode, supplying, during a second time interval, a same second programming current, of the other type chosen between a SET current and a RESET current, to all the direct and complementary memory cells that are to be programmed with said second programming current, thus completing, in just two time steps, writing of a logic word in the memory device.


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