The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Jul. 09, 2019
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Wei Peng, Hsinchu, TW;

Chun-Hung Liou, Hsinchu, TW;

Jiann-Tyng Tzeng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/70 (2012.01); G03F 1/36 (2012.01); G06F 30/398 (2020.01); G06F 30/394 (2020.01);
U.S. Cl.
CPC ...
G06F 30/392 (2020.01); G03F 1/36 (2013.01); G03F 1/70 (2013.01); G06F 30/394 (2020.01); G06F 30/398 (2020.01);
Abstract

A method (of generating a layout diagram) includes: for a first cell which includes first and second active area patterns, a cell-boundary (CB) having first and second edge portions (EPs) substantially parallel to a vertical direction (VEPs), and first and second VEP-adjacent regions correspondingly adjacent the first and second VEPs: configuring the first VEP-adjacent region (VAR) to be a first active area (AA) continuous (AA-continuous) region in which the first active area pattern extends in a horizontal direction from an interior of the first cell to the first VEP; and configuring the second VAR to be a first AA-discontinuous region, the second active area pattern extending in the horizontal direction from the interior of the first cell towards the second VEP, and there being a first gap between a first end of the second active area pattern and the second VEP representing the first AA-discontinuous region.


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