The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 29, 2021

Filed:

Mar. 05, 2018
Applicant:

Kanto Kagaku Kabushiki Kaisha, Tokyo, JP;

Inventors:

Yumiko Taniguchi, Saitama, JP;

Areji Takanaka, Saitama, JP;

Takuo Ohwada, Saitama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C11D 7/08 (2006.01); C11D 1/00 (2006.01); C11D 1/22 (2006.01); C11D 3/00 (2006.01); C11D 3/20 (2006.01); C11D 11/00 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
C11D 1/004 (2013.01); C11D 1/22 (2013.01); C11D 3/0042 (2013.01); C11D 3/2003 (2013.01); C11D 7/08 (2013.01); C11D 11/0035 (2013.01); C11D 11/0047 (2013.01); H01L 21/02074 (2013.01); H01L 21/304 (2013.01); H01L 21/31133 (2013.01);
Abstract

Provided is a cleaning solution composition which, when cleaning the surface of a semiconductor substrate or glass substrate, does not damage SiO, SiN, Si, and the like forming a layer on the substrate surface, can be used under processing conditions applicable to a brush scrub cleaning chamber equipped with a CMP apparatus, and can efficiently remove compounds derived from abrasive particles in a slurry. This cleaning solution composition for cleaning the surface of a semiconductor substrate or glass substrate contains: one or two or more fluorine atom-containing inorganic acids or salts thereof; water; one or two or more reducing agents; and one or two or more anionic surfactants, and has a hydrogen ion concentration (pH) of less than 7.


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