The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Feb. 19, 2018
Applicants:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Inventors:
Kohei Sasaki, Sayama, JP;
Daiki Wakimoto, Sayama, JP;
Yuki Koishikawa, Sayama, JP;
Quang Tu Thieu, Sayama, JP;
Assignees:
Tamura Corporation, Tokyo, JP;
Novel Crystal Technology, Inc., Saitama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 21/441 (2006.01); H01L 21/465 (2006.01); H01L 29/24 (2006.01); H01L 29/417 (2006.01); H01L 29/47 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8725 (2013.01); H01L 21/441 (2013.01); H01L 21/465 (2013.01); H01L 29/24 (2013.01); H01L 29/417 (2013.01); H01L 29/47 (2013.01); H01L 29/66969 (2013.01);
Abstract
Provided is a Schottky barrier diode which is configured from a GaO-based semiconductor, and has a lower rising voltage than a conventional one. In one embodiment, the Schottky barrier diodeis provided which has: a semiconductor layerconfigured from a GaO-based single crystal; an anode electrodewhich forms a Schottky junction with the semiconductor layer, and has a portion which contacts the semiconductor layerand is composed of Fe or Cu; and a cathode electrode