The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Jun. 25, 2019
United Microelectronics Corp., Hsin-Chu, TW;
Shih-Wei Su, Tainan, TW;
Hao-Hsuan Chang, Kaohsiung, TW;
Chih-Wei Chang, Tainan, TW;
Chi-Hsuan Cheng, Kaohsiung, TW;
Ting-An Chien, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method for forming a semiconductor device is disclosed. A substrate having at least two fins thereon and an isolation trench between the at least two fins is provided. A liner layer is then deposited on the substrate. The liner layer conformally covers the two fins and interior surface of the isolation trench. A stress-buffer film is then deposited on the liner layer. The stress-buffer film completely fills a lower portion that is located at least below half of a trench depth of the isolation trench. A trench-fill oxide layer is then deposited to completely fill an upper portion of the isolation trench.