The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Dec. 17, 2019
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
I-Hsiu Wang, Tainan County, TW;
Yean-Zhaw Chen, Tainan, TW;
Ying-Ting Hsia, Kaohsiung, TW;
Jhao-Ping Jiang, Changhua County, TW;
Chun-Chih Cheng, Changhua County, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer is formed over the semiconductor substrate. A plurality of dopants is formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing of the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion. An underneath layer is patterned to form a hole in the underneath layer using the patterned first semiconductive layer as a mask to pattern. A sidewall profile of the hole in the underneath layer is controlled by the first sidewall profile of the first portion of the first semiconductive layer.