The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
May. 14, 2020
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Shanghai Huali Microelectronics Corporation, Shanghai, CN;
Abstract
Embodiments described herein relate to a method for fabricating word lines of a NAND memory. In the process for fabricating the word lines of the NAND memory, by adding a sacrificial pattern at a position close to a core layer or a sidewall of a select transistor at the edge of the word lines, the actual word line pattern is not at the outermost edge of the pattern, the pattern density of the edge word line pattern is closer to the pattern density of the middle word line pattern, the morphology and size of the edge word line are closer to the morphology and size of the middle area during core layer etching and sidewall etching, and thus the uniformity of the finally etched word lines is improved.