The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Nov. 07, 2018
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Chih-Hsuan Lin, Hsinchu, TW;
Shao-Chang Huang, Hsinchu, TW;
Jia-Rong Yeh, Taipei, TW;
Yeh-Ning Jou, Hsinchu, TW;
Hwa-Chyi Chiou, Hsinchu, TW;
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Abstract
A semiconductor structure includes a first P-well, a first P-type diffusion region, a first N-type diffusion region, a second P-type diffusion region, and a first poly-silicon layer. The first P-type diffusion region is deposited in the first P-well and coupled to a first electrode. The first N-well is adjacent to the P-well. The first N-type diffusion region is deposited in the first N-well. The second P-type diffusion region is deposited between the first P-type diffusion region and the first N-type diffusion region, which is deposited in the first N-well. The second P-type diffusion region and the first N-type diffusion region are coupled to a second electrode. The first poly-silicon layer is deposited on the first P-type diffusion region.