logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11043427 B1

PDFFull Text
Date of Patent:
Jun. 22, 2021

Filed:

Oct. 28, 2019

Method of manufacture of a finfet device

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Chia-Ching Tsai, Tainan, TW;

Yi-Wei Chiu, Kaohsiung, TW;

Li-Te Hsu, Shanhua Township, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Kyoung Lee

Assistant Examiner:

Christina A Sylvia

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/78 (2006.01); H01L 21/3105 (2006.01); H01L 21/3115 (2006.01); H01L 21/3213 (2006.01); H01L 27/02 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823456 (2013.01); H01L 21/02321 (2013.01); H01L 21/31053 (2013.01); H01L 21/31155 (2013.01); H01L 21/32133 (2013.01); H01L 21/76264 (2013.01); H01L 21/823431 (2013.01); H01L 27/0207 (2013.01); H01L 29/0847 (2013.01); H01L 29/42376 (2013.01); H01L 29/66545 (2013.01); H01L 29/785 (2013.01); H01L 21/3065 (2013.01); H01L 21/3086 (2013.01); H01L 21/31111 (2013.01); H01L 21/76224 (2013.01); H01L 29/6656 (2013.01);
Abstract

A semiconductor device and method of manufacture are provided in which an the physical characteristics of a dielectric material are modified in order to provide additional benefits to surrounding structures during further processing. The modification may be performed by implanting ions into the dielectric material to form a modified region. Once the ions have been implanted, further processing relies upon the modified structure of the modified region instead of the original structure.

Find Patent Forward Citations

Tsai, Chia-Ching. (2021). Method of manufacture of a finfet device (U.S. Patent No. 11043427). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11043427

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…