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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11043391 B1

PDFFull Text
Date of Patent:
Jun. 22, 2021

Filed:

Aug. 21, 2018

Etching method and etching processing apparatus

Applicant:

Tokyo Electron Limited, Tokyo, JP;

Inventor:

Yusuke Saitoh, Miyagi, JP;

Assignee:

Tokyo Electron Limited, Tokyo, JP;

Attorney:

IPUSA, PLLC

Primary Examiner:

Thomas T Pham

Int. Cl.
CPC ...
H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 27/11529 (2017.01); H01L 27/11573 (2017.01); H01L 21/768 (2006.01); H01L 21/67 (2006.01); H01L 27/12 (2006.01); H01L 27/11575 (2017.01); H01J 37/32 (2006.01); H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/1157 (2017.01); H01L 27/11556 (2017.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01J 37/32165 (2013.01); H01L 21/67069 (2013.01); H01L 21/76802 (2013.01); H01L 27/11529 (2013.01); H01L 27/11573 (2013.01); H01L 27/11575 (2013.01); H01L 27/1207 (2013.01); H01L 27/1157 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11582 (2013.01);
Abstract

A method of etching silicon-containing film formed on an electrode layer of a floating potential is provided. The etching is performed in a processing vessel while supplying gas, a first high frequency electric power of a first frequency, and a second high frequency electric power of a second frequency less than the first frequency. The method includes a step of supplying, during etching of the silicon-containing film, the first high frequency electric power as a continuous wave and the second high frequency electric power as a pulse wave having a duty cycle of 20% or less, upon a distance from the electrode layer to a bottom of an etching pattern formed on the silicon-containing film becoming not more than a predetermined distance.

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