The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 22, 2021
Filed:
Jun. 05, 2019
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Moriz Jelinek, Villach, AT;
Michael Kokot, Dresden, DE;
Christian Krueger, Liegau-Augustusbad, DE;
Hans-Joachim Schulze, Taufkirchen, DE;
Werner Schustereder, Villach, AT;
Assignee:
Infineon Technologies AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/66 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/36 (2006.01); H01L 21/687 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26513 (2013.01); H01L 21/68764 (2013.01); H01L 22/26 (2013.01); H01L 29/0619 (2013.01); H01L 29/1079 (2013.01); H01L 29/36 (2013.01);
Abstract
A method of manufacturing a semiconductor device includes reducing a thickness of a semiconductor substrate and/or forming a doped region in the semiconductor substrate. The method further includes changing an ion acceleration energy of an ion beam while effecting a relative movement between the semiconductor substrate and the ion beam impinging on the semiconductor substrate.