The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Feb. 12, 2016
Applicant:

Hewlett Packard Enterprise Development Lp, Houston, TX (US);

Inventors:

Zhiyong Li, Foster City, CA (US);

Lu Zhang, Palo Alto, CA (US);

Minxian Zhang, Mountain View, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); G11C 11/54 (2006.01); G11C 11/56 (2006.01); G06N 3/063 (2006.01); G11C 5/02 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 11/54 (2013.01); G06N 3/063 (2013.01); G11C 5/02 (2013.01); G11C 11/5685 (2013.01); G11C 13/0002 (2013.01); G11C 13/0011 (2013.01); G11C 2213/77 (2013.01);
Abstract

An example device in accordance with an aspect of the present disclosure includes an active oxide layer to form and dissipate a conductive bridge. The conductive bridge is to dissipate spontaneously within a relaxation time to enable the memory device to self-refresh according to volatile behavior in response to the input voltage being below a threshold corresponding to disregarding sneak current and noise of a crossbar array in which the memory device is to operate. The conductive bridge is to persist beyond the relaxation time to enable the memory device to retain programming for neuromorphic computing training according to non-volatile behavior of the memory device in response to the input voltage not being below the threshold.


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