The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 22, 2021

Filed:

Aug. 29, 2019
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Aaron Jannusch, Boise, ID (US);

Brett K. Dodds, Boise, ID (US);

Debra M. Bell, Boise, ID (US);

Joshua E. Alzheimer, Boise, ID (US);

Scott E. Smith, Plano, TX (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G06F 11/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/1044 (2013.01); G06F 11/102 (2013.01); G06F 11/1032 (2013.01);
Abstract

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which a host device may access a group of memory cells (e.g., portion of an array configurable to store ECC parity bits) otherwise reserved for ECC functionality of a memory device. The memory device may include a register to indicate whether its ECC functionality is enabled or disabled. When the register indicates the ECC functionality is disabled, the memory device may increase a storage capacity available to the host device by making the group of memory cells available for user-accessible data. Additionally or alternatively, the memory device may store metadata associated with various operational aspects of the memory device in the group of memory cells. Moreover, the memory device may modify a burst length to accommodate additional information to be stored in or read from the group of memory cells.


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